Temperature-dependent growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering
- Author
- CHI ZHANG1 2 3 ; CHEN, Xin-Liang1 2 3 ; GENG, Xin-Hua1 2 3 ; TIAN, Cong-Sheng1 2 3 ; QIAN HUANG1 2 3 ; YING ZHAO1 2 3 ; ZHANG, Xiao-Dan1 2 3
[1] Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
[2] Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
[3] Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China - Source
Applied surface science. 2013, Vol 274, pp 371-377, 7 p ; ref : 32 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Reactive magnetron sputtering Solar cells Substrate temperature W-doping ZnO thin films
- Keyword (fr)
- Cellule solaire Composé de métal de transition Composé minéral Couche mince Croissance film Dépendance température Magnétron Matériau dopé Oxyde de zinc Pulvérisation cathodique Pulvérisation réactive O Zn ZnO
- Keyword (en)
- Solar cells Transition element compounds Inorganic compounds Thin films Film growth Temperature dependence Magnetrons Doped materials Zinc oxide Cathode sputtering Reactive sputtering
- Keyword (es)
- Zinc óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27313199
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2013.03.069 
https://dx.doi.org/10.1016/j.apsusc.2013.03.069
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