The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms
- Author
- ABBASI-FIROUZJAH, Marzieh1 ; HOSSEINI, Seyed-Iman2 ; SHARIAT, Mahdi1 ; SHOKRI, Babak1 3
[1] Laser & Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran, 1983963113, Iran, Islamic Republic of
[2] Physics Department, Shahrood University of Technology, Shahrood, Iran, Islamic Republic of
[3] Physics Department, Shahid Beheshti University G.C, Evin, Tehran, Iran, Islamic Republic of - Source
Journal of non-crystalline solids. 2013, Vol 368, pp 86-92, 7 p ; ref : 28 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Condensed state physics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Electron impact Oxidation PECVD Plasma Silicon dioxide film
- Keyword (fr)
- Composition chimique Composition surface Composé organométallique Couche mince Impact électron Microscopie force atomique Méthode PECVD Oxydation Procédé dépôt Radiofréquence Silicium Spectrométrie FTIR Topographie surface 7920K 8105L 8105Z 8115G Substrat silicium
- Keyword (en)
- Chemical composition Surface composition Organometallic compounds Thin films Electron impact Atomic force microscopy PECVD Oxidation Deposition process Radiofrequency Silicon Fourier-transformed infrared spectrometry Surface topography
- Keyword (es)
- Impacto electrón Procedimiento revestimiento Radiofrecuencia Espectrometría FTIR
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20K Other electron-impact emission phenomena
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05Z Other materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27321299
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jnoncrysol.2013.03.008 
https://dx.doi.org/10.1016/j.jnoncrysol.2013.03.008
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