Identifying the mechanisms of p-to-n conversion in unipolar graphene field-effect transistors
- Author
- CHIN CHONG YAP, Ray1 ; HONG LI1 ; WAI LEONG CHOW1 ; CONG XIANG LU1 ; KANG TAY, Beng1 ; HANG TONG TEO, Edwin1 2
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
[2] Temasek Laboratories@NTU, Research Techno Plaza, 50 Nanyang Drive, 637553, Singapore, Singapore - Source
Nanotechnology (Bristol. Print). 2013, Vol 24, Num 19 ; 195202.1-195202.7 ; ref : 28 ref
- ISSN
- 0957-4484
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adatome Ammoniac Atmosphère contrôlée Effet dimensionnel Epaisseur couche Graphène Nitrure de silicium Plan expérience Seuil tension Spectre Raman Spectrométrie Raman Structure lamellaire Titane Transistor effet champ 7830N 8105T 8105U 8530T NH3 Si3N4
- Keyword (en)
- Adatoms Ammonia Controlled atmospheres Size effect Layer thickness Graphene Silicon nitride Experimental design Voltage threshold Raman spectra Raman spectroscopy Lamellar structure Titanium Field effect transistors
- Keyword (es)
- Espesor capa Graphene Silicio nitruro Umbral tensión Estructura lamelar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30N Fullerenes and related materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27329079
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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