A Class-G Switched-Capacitor RF Power Amplifier
- Author
- YOO, Sang-Min1 ; WALLING, Jeffrey S2 ; DEGANI, Ofir3 ; JANN, Benjamin4 ; SADHWANI, Ram4 ; RUDELL, Jacques C1 ; ALLSTOT, David J1
[1] Department of Electrical Engineering, University of Washington, Seattle, WA 98195-2500, United States
[2] Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, United States
[3] Intel Corporation, Haifa, Israel
[4] Intel Corporation, Hillsboro, OR 97124, United States - Conference name
- IEE Radio Frequence Integrated Circuits (RFIC) Symposium (RFIC) Symposium (Montréal 2012-06-17)
- Source
IEEE journal of solid-state circuits. 2013, Vol 48, Num 5, pp 1212-1224, 13 p ; ref : 20 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- EER Envelope elimination and restoration RF DAC SCPA polar transmitter power amplifier switched-capacitor power amplifier
- Keyword (fr)
- Alimentation électrique Amplificateur puissance Amplificateur radiofréquence Capacité commutée Circuit capacité commutée Commutateur Convertisseur NA Distorsion signal Electronique puissance Emetteur Energie pointe Evaluation performance Implémentation Modulation amplitude en quadrature Multiplexage fréquence orthogonal Puissance sortie Technologie MOS complémentaire Dispositif commuté
- Keyword (en)
- Power supply Power amplifier Radiofrequency amplifiers Switched capacity Switched capacitor networks Selector switch DA converter Signal distortion Power electronics Transmitter Peak power Performance evaluation Implementation Quadrature amplitude modulation Orthogonal frequency division multiplexing Output power Complementary MOS technology Switched device
- Keyword (es)
- Alimentación eléctrica Amplificador potencia Capacidad conmutada Conmutador Convertidor NA Distorsión señal Electrónica potencia Emisor Energía punta Evaluación prestación Implementación Multiplaje frecuencia ortogonal Potencia salida Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A2 Amplifiers
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A7 Switching, multiplexing, switched capacity circuits
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02B Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27368542
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JSSC.2013.2252754 
https://dx.doi.org/10.1109/JSSC.2013.2252754
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:9:\"\u0000*\u0000jtitle\";s:36:\"IEEE journal of solid-state circuits\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE j. solid-state circuits\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"48\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:4:\"1212\";s:8:\"\u0000*\u0000epage\";s:4:\"1224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9200\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"YOO\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Sang-Min\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:18:\"WALLING, Jeffrey S\";i:1;s:12:\"DEGANI, Ofir\";i:2;s:14:\"JANN, Benjamin\";i:3;s:13:\"SADHWANI, Ram\";i:4;s:17:\"RUDELL, Jacques C\";i:5;s:16:\"ALLSTOT, David J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IJSCBC\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"13\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:9:\"\u0000*\u0000jtitle\";s:36:\"IEEE journal of solid-state circuits\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE j. solid-state circuits\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"48\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:4:\"1212\";s:8:\"\u0000*\u0000epage\";s:4:\"1224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9200\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"YOO\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Sang-Min\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:18:\"WALLING, Jeffrey S\";i:1;s:12:\"DEGANI, Ofir\";i:2;s:14:\"JANN, Benjamin\";i:3;s:13:\"SADHWANI, Ram\";i:4;s:17:\"RUDELL, Jacques C\";i:5;s:16:\"ALLSTOT, David J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IJSCBC\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"13\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:9:\"\u0000*\u0000jtitle\";s:36:\"IEEE journal of solid-state circuits\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE j. solid-state circuits\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"48\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:4:\"1212\";s:8:\"\u0000*\u0000epage\";s:4:\"1224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9200\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"YOO\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Sang-Min\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:18:\"WALLING, Jeffrey S\";i:1;s:12:\"DEGANI, Ofir\";i:2;s:14:\"JANN, Benjamin\";i:3;s:13:\"SADHWANI, Ram\";i:4;s:17:\"RUDELL, Jacques C\";i:5;s:16:\"ALLSTOT, David J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IJSCBC\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"13\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:9:\"\u0000*\u0000jtitle\";s:36:\"IEEE journal of solid-state circuits\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE j. solid-state circuits\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"48\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:4:\"1212\";s:8:\"\u0000*\u0000epage\";s:4:\"1224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9200\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"YOO\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Sang-Min\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:18:\"WALLING, Jeffrey S\";i:1;s:12:\"DEGANI, Ofir\";i:2;s:14:\"JANN, Benjamin\";i:3;s:13:\"SADHWANI, Ram\";i:4;s:17:\"RUDELL, Jacques C\";i:5;s:16:\"ALLSTOT, David J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IJSCBC\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"13\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1109\/JSSC.2013.2252754\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:9:\"\u0000*\u0000jtitle\";s:36:\"IEEE journal of solid-state circuits\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE j. solid-state circuits\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"48\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:4:\"1212\";s:8:\"\u0000*\u0000epage\";s:4:\"1224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9200\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"YOO\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Sang-Min\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:18:\"WALLING, Jeffrey S\";i:1;s:12:\"DEGANI, Ofir\";i:2;s:14:\"JANN, Benjamin\";i:3;s:13:\"SADHWANI, Ram\";i:4;s:17:\"RUDELL, Jacques C\";i:5;s:16:\"ALLSTOT, David J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IJSCBC\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:47:\"A Class-G Switched-Capacitor RF Power Amplifier\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"13\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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