Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
- Author
- TOKO, Kaoru1 ; FUKATA, Naoki2 ; NAKAZAWA, Koki1 ; KUROSAWA, Masashi3 ; USAMI, Noritaka4 ; MIYAO, Masanobu3 ; SUEMASU, Takashi1
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
[2] National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan
[3] Department of Electronics, Kyushu University, Motooka, Fukuoka 819-0395, Japan
[4] Institute of Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan - Source
Journal of crystal growth. 2013, Vol 372, pp 189-192, 4 p ; ref : 32 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Crystal orientation A2. Solid phase crystallization B1. Polycrystalline films B2. Semiconducting germanium
- Keyword (fr)
- Cellule solaire Composé III-V Couche mince amorphe Couche mince Couche tampon Couche épitaxique Cristallisation Dépendance température Dépôt chimique phase vapeur Effet température Epaisseur couche Epitaxie Germanium Grosseur grain Orientation cristalline Polycristal Recuit thermique Réaction dirigée Semiconducteur III-V Température recuit 6470K 6855J 8115G 8460J Substrat SiO2 Substrat germanium Substrat verre
- Keyword (en)
- Solar cells III-V compound Amorphous thin film Thin films Buffer layer Epitaxial layers Crystallization Temperature dependence CVD Temperature effects Layer thickness Epitaxy Germanium Grain size Crystal orientation Polycrystals Thermal annealing Template reaction III-V semiconductors Annealing temperature
- Keyword (es)
- Compuesto III-V Capa fina amorfa Capa tampón Espesor capa Recocido térmico Reacción dirigida Temperatura recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D70 Specific phase transitions / 001B60D70K Solid-solid transitions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27382467
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.03.031 
https://dx.doi.org/10.1016/j.jcrysgro.2013.03.031
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