Morphology evolution of epitaxial SiGe and Si in patterns
- Author
- SEISS, Birgit1 2 ; DUTARTRE, Didier1
[1] STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
[2] Université de Lyon, Institut des Nanotechnologies de Lyon (INL), UMR 5270, INSA-Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne, France - Conference title
- Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)
- Conference name
- ISTDM 2012 International SiGe Technology and Device Meeting (6 ; Berkeley, California 2012-06-04)
- Author (monograph)
- KOESTER, Steven J (Editor)1 ; KING LIU, Tsu-Jae (Editor)1 ; HARTMANN, Jean-Michel (Editor)1 ; LOO, Roger (Editor)1 ; YEO, Yee-Chia (Editor)1 ; CARROLL, Malcolm S (Editor)1
[1] ECE Department, University of Minnesota, 200 Uniion St. SE, Minneapolis, MN 55455, United States - Source
Solid-state electronics. 2013, Vol 83, pp 18-24, 7 p ; ref : 14 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Anisotropy Morphology Pattern size effect Selective epitaxy SiGe Silicon
- Keyword (fr)
- Couche mince Effet dimensionnel Morphologie Recuit Relaxation contrainte Silicium Traitement thermique Alliage Ge Si Croissance sélective Epitaxie phase liquide
- Keyword (en)
- Thin films Size effect Morphology Annealing Stress relaxation Silicon Heat treatments Ge-Si alloys Selective growth LPE
- Keyword (es)
- Aleación Ge Si Crecimiento selectivo Epitaxia en fase liquida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27407157
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.sse.2013.01.034 
https://dx.doi.org/10.1016/j.sse.2013.01.034
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Solid-state electronics\";s:9:\"\u0000*\u0000stitle\";s:20:\"Solid-state electron\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"83\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"18\";s:8:\"\u0000*\u0000epage\";s:2:\"24\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1101\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SEISS\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Birgit\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:16:\"DUTARTRE, Didier\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:90:\"Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)\";s:8:\"\u0000*\u0000title\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Solid-state electronics\";s:9:\"\u0000*\u0000stitle\";s:20:\"Solid-state electron\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"83\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"18\";s:8:\"\u0000*\u0000epage\";s:2:\"24\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1101\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SEISS\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Birgit\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:16:\"DUTARTRE, Didier\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:90:\"Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)\";s:8:\"\u0000*\u0000title\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Solid-state electronics\";s:9:\"\u0000*\u0000stitle\";s:20:\"Solid-state electron\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"83\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"18\";s:8:\"\u0000*\u0000epage\";s:2:\"24\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1101\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SEISS\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Birgit\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:16:\"DUTARTRE, Didier\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:90:\"Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)\";s:8:\"\u0000*\u0000title\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Solid-state electronics\";s:9:\"\u0000*\u0000stitle\";s:20:\"Solid-state electron\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"83\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"18\";s:8:\"\u0000*\u0000epage\";s:2:\"24\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1101\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SEISS\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Birgit\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:16:\"DUTARTRE, Didier\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:90:\"Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)\";s:8:\"\u0000*\u0000title\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.sse.2013.01.034\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Solid-state electronics\";s:9:\"\u0000*\u0000stitle\";s:20:\"Solid-state electron\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"83\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"18\";s:8:\"\u0000*\u0000epage\";s:2:\"24\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1101\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SEISS\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Birgit\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:16:\"DUTARTRE, Didier\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:90:\"Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)\";s:8:\"\u0000*\u0000title\";s:57:\"Morphology evolution of epitaxial SiGe and Si in patterns\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
