The Stressing Effect of Electromigration from the Maxwell Stress and a Preliminary Mean-Time-to-Failure Analysis
- Author
- PENG ZHOU1
[1] Department of Astronautical Science and Mechanics, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China - Source
Journal of electronic materials. 2013, Vol 42, Num 6, pp 956-962, 7 p ; ref : 21 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- Black's equation Electromigration stressing effect
- Keyword (fr)
- Analyse dommage Couple diffusion Densité courant Diffusion(transport) Distorsion Défaut Effet Joule Effet contrainte Electrodiffusion Energie activation Interface Mécanisme croissance Position atomique Réseau cristallin Taux croissance 6630Q
- Keyword (en)
- Failure analysis Diffusion pair Current density Diffusion Distortion Defects Joule heating Stress effects Electrodiffusion Activation energy Interfaces Growth mechanism Atomic position Crystal lattices Growth rate
- Keyword (es)
- Par difusión Mecanismo crecimiento Posición atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30Q Electromigration
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27427715
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2474-6 
https://dx.doi.org/10.1007/s11664-013-2474-6
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