Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC
- Autor
- FANGZHEN WU1 ; HUANHUAN WANG1 ; BYRAPPA, Shayan1 ; RAGHOTHAMACHAR, Balaji1 ; DUDLEY, Michael1 ; PING WU2 ; XUEPING XU2 ; ILYA ZWIEBACK2
[1] Materials Science and Engineering, Stony Brook University, Stony Brook, NY, United States
[2] II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, United States - Titulo de la conferencia
- 2012 Electronic Material Conference
- Nombre de la conferencia
- EMC 2012 Electronic Material Conference (University Park, PA 2012-06-20)
- Autor ( monografía)
- CALDWELL, J (Editor); GOLDMAN, R (Editor); PHILLIPS, J (Editor); JURCHESCU, O (Editor); SHAHEDIPOUR-SANDVIK, S (Editor); SALLEO, A (Editor); XING, G (Editor); XU, K (Editor)
- Fuente
Journal of electronic materials. 2013, Vol 42, Num 5, pp 787-793, 7 p ; ref : 17 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Springer, Heidelberg
- País de la publicación
- Germany
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- Silicon carbide micropipe stacking fault x-ray topography
- Palabra clave (fr)
- Carbure de silicium Croissance cristalline en phase vapeur Dislocation coin Dislocation filetée Dislocation imparfaite Dislocation vis Défaut croissance Défaut empilement Dépôt physique phase vapeur Glissement dévié Mécanisme formation Pastille électronique Plan glissement Rayonnement blanc Rayonnement synchrotron Source dislocation Système glissement Topographie RX Vecteur Burgers 6172N 6855J 8115C SiC
- Palabra clave (in)
- Silicon carbide Crystal growth from vapors Edge dislocations Threading dislocation Partial dislocation Screw dislocations Growth defect Stacking faults Physical vapor deposition Cross slip Formation mechanism Wafers Slip planes White radiation Synchrotron radiation Dislocation sources Slip system X-ray topography Burgers vector
- Palabra clave (es)
- Silicio carburo Dislocación aterrajada Dislocación imperfecta Defecto crecimiento Deslizamiento desvíado Mecanismo formacion Radiación blanca Sistema deslizamiento
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Disciplina
- Electronics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 27439929
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1007/s11664-012-2379-9 
https://dx.doi.org/10.1007/s11664-012-2379-9
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"42\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"787\";s:8:\"\u0000*\u0000epage\";s:3:\"793\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"FANGZHEN WU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"HUANHUAN WANG\";i:1;s:15:\"BYRAPPA, Shayan\";i:2;s:22:\"RAGHOTHAMACHAR, Balaji\";i:3;s:15:\"DUDLEY, Michael\";i:4;s:7:\"PING WU\";i:5;s:10:\"XUEPING XU\";i:6;s:13:\"ILYA ZWIEBACK\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:35:\"2012 Electronic Material Conference\";s:8:\"\u0000*\u0000title\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"42\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"787\";s:8:\"\u0000*\u0000epage\";s:3:\"793\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"FANGZHEN WU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"HUANHUAN WANG\";i:1;s:15:\"BYRAPPA, Shayan\";i:2;s:22:\"RAGHOTHAMACHAR, Balaji\";i:3;s:15:\"DUDLEY, Michael\";i:4;s:7:\"PING WU\";i:5;s:10:\"XUEPING XU\";i:6;s:13:\"ILYA ZWIEBACK\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:35:\"2012 Electronic Material Conference\";s:8:\"\u0000*\u0000title\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"42\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"787\";s:8:\"\u0000*\u0000epage\";s:3:\"793\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"FANGZHEN WU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"HUANHUAN WANG\";i:1;s:15:\"BYRAPPA, Shayan\";i:2;s:22:\"RAGHOTHAMACHAR, Balaji\";i:3;s:15:\"DUDLEY, Michael\";i:4;s:7:\"PING WU\";i:5;s:10:\"XUEPING XU\";i:6;s:13:\"ILYA ZWIEBACK\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:35:\"2012 Electronic Material Conference\";s:8:\"\u0000*\u0000title\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"42\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"787\";s:8:\"\u0000*\u0000epage\";s:3:\"793\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"FANGZHEN WU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"HUANHUAN WANG\";i:1;s:15:\"BYRAPPA, Shayan\";i:2;s:22:\"RAGHOTHAMACHAR, Balaji\";i:3;s:15:\"DUDLEY, Michael\";i:4;s:7:\"PING WU\";i:5;s:10:\"XUEPING XU\";i:6;s:13:\"ILYA ZWIEBACK\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:35:\"2012 Electronic Material Conference\";s:8:\"\u0000*\u0000title\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-012-2379-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"42\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"787\";s:8:\"\u0000*\u0000epage\";s:3:\"793\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"FANGZHEN WU\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"HUANHUAN WANG\";i:1;s:15:\"BYRAPPA, Shayan\";i:2;s:22:\"RAGHOTHAMACHAR, Balaji\";i:3;s:15:\"DUDLEY, Michael\";i:4;s:7:\"PING WU\";i:5;s:10:\"XUEPING XU\";i:6;s:13:\"ILYA ZWIEBACK\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:35:\"2012 Electronic Material Conference\";s:8:\"\u0000*\u0000title\";s:91:\"Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
