The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) Surface
- Author
- SHETTY, Satish1 ; KESARIA, Manoj1 ; GHATAK, Jay1 ; SHIVAPRASAD, S. M1
[1] International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India - Source
Crystal growth & design. 2013, Vol 13, Num 6, pp 2407-2412, 6 p ; ref : 30 ref
- ISSN
- 1528-7483
- Scientific domain
- Crystallography
- Publisher
- American Chemical Society, Washington,DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé III-V Couche épitaxique Cristal hexagonal Croissance spirale Dislocation interfaciale Epitaxie jet moléculaire Nanobâtonnet Nanomatériau Nanostructure Nitruration Nitrure de gallium Nitrure de silicium Nucléation Propriété interface Propriété symétrie Réseau cubique Semiconducteur III-V Silicium Structure wurtzite Taux croissance 6150A 8107 8107V 8115H GaN Si SiNx Substrat GaN Substrat silicium
- Keyword (en)
- III-V compound Epitaxial layers Hexagonal crystals Spiral growth Misfit dislocations Molecular beam epitaxy Nanorod Nanostructured materials Nanostructures Nitridation Gallium nitride Silicon nitride Nucleation Interface properties Symmetry property Cubic lattices III-V semiconductors Silicon Wurtzite structure Growth rate
- Keyword (es)
- Compuesto III-V Cristal hexagonal Crecimiento espiral Nanopalito Galio nitruro Silicio nitruro Propiedad interfase Propiedad simetría Estructura wurtzita
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A50 Crystalline state (including molecular motions in solids) / 001B60A50A Theory of crystal structure, crystal symmetry; calculations and modeling
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27449031
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/cg4000928 
https://dx.doi.org/10.1021/cg4000928
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