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InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Author
HEINRICHSDORFF, F1 ; KROST, A1 ; KIRSTAEDTER, N1 ; MAO, M.-H1 ; GRUNDMANN, M1 ; BIMBERG, D1 ; KOSOGOV, A. O1 2 ; WERNER, P2
[1] Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
[2] Max-Planck-Institut far Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
Conference title
International Colloquium on Scanning Tunneling Microscopy
Conference name
International Symposium on Formation, Physics and Device Application of Quantum Dot Structures QDS'96 (Sapporo 1996-11-04)
Author (monograph)
HOSOKI, Shigeyuki (Editor); IKAI, Atsushi (Editor); KAWAZU, Akira (Editor); MORITA, Seizo (Editor); NISHIKAWA, Osamu (Editor); OURA, Kenjiro (Editor); SHIGEKAWA, Hidemi (Editor); TSUKADA, Masaru (Editor)
Japan Society of Applied Physics, Japan (Funder/Sponsor)
Source

Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4129-4133 ; 1 ; ref : 17 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Conference Paper
Language
English
Keyword (fr)
Composé binaire Densité Déplacement raie spectrale Etude expérimentale Gallium arséniure Indium arséniure Laser semiconducteur Méthode MOCVD Photoluminescence Point quantique Relation ordre Semiconducteur TEM As Ga As In GaAs InAs Composé minéral
Keyword (en)
Binary compounds Density Spectral line shift Experimental study Gallium arsenides Indium arsenides Semiconductor lasers MOCVD Photoluminescence Quantum dots Ordering Semiconductor materials TEM Inorganic compounds
Keyword (es)
Desplazamiento raya espectral Relación orden Semiconductor(material)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
7866F III-V semiconductors

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2748018

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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