Compositional and electrical properties of ECR-CVD silicon oxynitrides
- Author
- HERNANDEZ, M. J1 ; GARRIDO, J2 ; MARTINEZ, J2 ; PIQUERAS, J1
[1] Laboratorio de Microelectrónica, Departamento de Fisica Aplicada, Universidad Autónoma de Madrid, Cantoblanco, 28049, Madrid, Spain
[2] Departamento de Ingenieria Informática, Universidad Autónoma de Madrid, Cantoblanco, 28049, Madrid, Spain - Source
Semiconductor science and technology. 1997, Vol 12, Num 7, pp 927-932 ; ref : 28 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Croissance film Densité niveau énergie Dépôt chimique phase vapeur Ellipsométrie Etat interface Etude expérimentale Oxynitrure Relation fabrication propriété Silicium composé Spectre IR Spectre absorption N O Si SiOxNy Composé minéral
- Keyword (en)
- Thin films Film growth Energy-level density Chemical vapor deposition Ellipsometry Interface states Experimental study Oxynitrides Fabrication property relation Silicon compounds Infrared spectra Absorption spectra Inorganic compounds
- Keyword (es)
- Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pacs
- 7321 Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2750555
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/12/7/027 
https://dx.doi.org/10.1088/0268-1242/12/7/027
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"927\";s:8:\"\u0000*\u0000epage\";s:3:\"932\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"HERNANDEZ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"GARRIDO, J\";i:1;s:11:\"MARTINEZ, J\";i:2;s:11:\"PIQUERAS, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"927\";s:8:\"\u0000*\u0000epage\";s:3:\"932\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"HERNANDEZ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"GARRIDO, J\";i:1;s:11:\"MARTINEZ, J\";i:2;s:11:\"PIQUERAS, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"927\";s:8:\"\u0000*\u0000epage\";s:3:\"932\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"HERNANDEZ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"GARRIDO, J\";i:1;s:11:\"MARTINEZ, J\";i:2;s:11:\"PIQUERAS, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"927\";s:8:\"\u0000*\u0000epage\";s:3:\"932\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"HERNANDEZ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"GARRIDO, J\";i:1;s:11:\"MARTINEZ, J\";i:2;s:11:\"PIQUERAS, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/12\/7\/027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1997\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"927\";s:8:\"\u0000*\u0000epage\";s:3:\"932\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"HERNANDEZ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"GARRIDO, J\";i:1;s:11:\"MARTINEZ, J\";i:2;s:11:\"PIQUERAS, J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:70:\"Compositional and electrical properties of ECR-CVD silicon oxynitrides\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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