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Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC

Author
SCAJEV, Patrik1 ; JARASIUNAS, Kęstutis1
[1] Institute of Applied Research, Vilnius University, Sauletekio al. 9-III, 10222 Vilnius, Lithuania
Source

Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 26 ; 265304.1-265304.6 ; ref : 30 ref

CODEN
JPAPBE
ISSN
0022-3727
Scientific domain
Condensed state physics; Physics; Plasma physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Bande interdite Carbure de silicium Coefficient diffusion Densité porteur charge Diffusion ambipolaire Diffusion(transport) Diffusivité Durée vie porteur charge Dépôt chimique phase vapeur Effet photoinduit Phonon optique Phénomène transitoire Porteur libre Renormalisation Résolution temporelle Spectre résolution temporelle Spectrométrie pompe sonde 66 SiC
Keyword (en)
Energy gap Silicon carbide Diffusion coefficient Carrier density Ambipolar diffusion Diffusion Diffusivity Carrier lifetime CVD Photoinduced effect Optical phonons Transients Free carrier Renormalization Time resolution Time resolved spectra Pump probe spectrometry
Keyword (es)
Silicio carburo Coeficiente difusión Efecto fotoinducido Portador libre Espectrometría bomba sonda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic)

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27508717

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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