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The effect of doping on the combustion and reaction kinetics of silicon reactives

Author
YARRINGTON, Cole D1 ; GROVEN, Lori J1 ; REEVES, Robert V1 ; SON, Steven F1
[1] School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, United States
Source

Combustion and flame. 2013, Vol 160, Num 9, pp 1835-1841, 7 p ; ref : 19 ref

CODEN
CBFMAO
ISSN
0010-2180
Scientific domain
General chemistry, physical chemistry; Energy
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Combustion Doping Kinetics Silicon
Keyword (fr)
Analyse thermique Cinétique combustion Combustion Diffraction RX Dimension particule Distribution dimension particule Ethylène(tétrafluoro) polymère Matériau dopé Microscopie électronique balayage Morphologie Silicium Spectrométrie Raman Structure surface
Keyword (en)
Thermal analysis Combustion kinetics Combustion X ray diffraction Particle size Particle size distribution Tetrafluoroethylene polymer Doped materials Scanning electron microscopy Morphology Silicon Raman spectrometry Surface structure
Keyword (es)
Análisis térmico Combustión Difracción RX Dimensión partícula Distribución dimensión partícula Etileno(tetrafluoro) polímero Microscopía electrónica barrido Morfología Silicio Espectrometría Raman Estructura superficie
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D08 Chemical industry and chemicals / 001D08A Industrial chemicals / 001D08A05 Powders, propellants, explosives

Discipline
Chemical and parachemical industries
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27512200

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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