Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
- Author
- CHANG, C.-Y1 ; YOKOYAMA, M1 ; KIM, S.-H1 ; ICHIKAWA, O2 ; OSADA, T2 ; HATA, M2 ; TAKENAKA, M1 ; TAKAGI, S1
[1] Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
[2] Sumitomo Chemical Corporation Ltd., Kitahara, Tsukuba, Ibaraki 300-3294, Japan - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 28-30, 3 p ; ref : 14 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- High-k dielectrics InGaAs Interface state density Metal gate electrodes
- Keyword (fr)
- Alumine Capacité électrique Caractéristique électrique Condensateur MOS Densité état Diélectrique permittivité élevée Epaisseur Etat interface Etat électronique interface Grille transistor Interface Multicouche Oxyde d'hafnium Propriété diélectrique Propriété interface Propriété électrique Semiconducteur Al2O3 HfO2 Composé III-VI
- Keyword (en)
- Alumina Capacitance Electrical characteristic MOS capacitor Density of states High k dielectric Thickness Interface state Interface electron state Transistor gate Interface Multiple layer Hafnium oxide Dielectric properties Interface properties Electrical properties Semiconductor materials III-VI compound
- Keyword (es)
- Alúmina Capacitancia Característica eléctrica Capacidad MOS Densidad estado Dieléctrico alta constante dieléctrica Espesor Estado interfase Estado electrónico interfase Rejilla transistor Interfase Capa múltiple Hafnio óxido Propiedad dieléctrica Propiedad interfase Propiedad eléctrica Semiconductor(material) Compuesto III-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516643
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.086 
https://dx.doi.org/10.1016/j.mee.2013.03.086
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