Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
- Author
- BAOJUN TANG1 2 ; TOLEDANO-LUQUE, M2 ; ZHANG, W. D1 ; VAN DEN BOSCH, G2 ; DEGRAEVE, R2 ; ZHANG, J. F1 ; VAN HOUDT, J2
[1] School of Engineering, Liverpool John Moores University, Byrom Street, Liverpool L3 3AF, United Kingdom
[2] IMEC, Kapeldreef 75, 3001 Leuven, Belgium - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 39-42, 4 p ; ref : 9 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 3D flash memory Annealing Charge pumping Interface states Optimization Poly silicon
- Keyword (fr)
- Analyse statistique Canal vertical Circuit NON ET Circuit intégré Défaut Etat interface Miniaturisation Mémoire flash Méthode statistique Optimisation Pompage charge Recuit Silicium Circuit logique Mémoire non volatile
- Keyword (en)
- Statistical analysis Vertical channel NAND circuit Integrated circuit Defect Interface state Miniaturization Flash memory Statistical method Optimization Charge pumping Annealing Silicon Logic circuit Non volatile memory
- Keyword (es)
- Análisis estadístico Canal vertical Circuito NOY Circuito integrado Defecto Estado interfase Miniaturización Memoria flash Método estadístico Optimización Bombeo carga Recocido Silicio Circuito lógico Memoria no volátil
- Keyword (de)
- Statistische Analyse Integrierte Schaltung Fehler Miniaturisierung Optimierung Gluehen Silicium
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40E Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11C Production techniques / 001D11C02 Heat treatment / 001D11C02A Annealing
- Discipline
- Electronics Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516646
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.067 
https://dx.doi.org/10.1016/j.mee.2013.03.067
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