Charge trapping and electrical degradation in atomic layer deposited Al2O3 films
- Author
- GONZALEZ, M. B1 ; RAFI, J. M1 ; BELDARRAIN, O1 ; ZABALA, M1 ; CAMPABADAL, F1
[1] Institut de Microelectrónica de Barcelona (CNM-CSIC), Campus UAB, 08193 Bellaterra, Spain - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 57-59, 3 p ; ref : 20 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Al2O3 Charge trapping Electrical degradation Progressive breakdown Soft breakdown
- Keyword (fr)
- Alumine Caractéristique capacité tension Caractéristique courant tension Condensateur Contrainte électrique Défaut Dégradation Effet contrainte Endommagement Mode rupture Méthode ALE Méthode couche atomique Piégeage porteur charge Al2O3 Composé III-VI
- Keyword (en)
- Alumina Voltage capacity curve Voltage current curve Capacitor Electric stress Defect Degradation Stress effects Damaging Fracture mode Atomic layer epitaxial growth Atomic layer method Charge carrier trapping III-VI compound
- Keyword (es)
- Alúmina Característica capacidad tensión Característica corriente tensión Condensador Tensión eléctrica Defecto Degradación Deterioración Modo ruptura Método capa atómica Captura portador carga Compuesto III-VI
- Keyword (de)
- Tonerde Kondensator Fehler
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20M Fatigue, brittleness, fracture, and cracks
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11G Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology / 001D11G05 Fractures
- Discipline
- Electronics Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516651
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.014 
https://dx.doi.org/10.1016/j.mee.2013.03.014
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