Investigation of MOSC conductance spectra by MPAS technique
- Author
- GUTT, T1 ; PRZEWLOCKI, H. M1
[1] Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 94-96, 3 p ; ref : 5 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Capture cross-section Conductance method Interface traps MOS
- Keyword (fr)
- Condensateur MOS Couche oxyde Epaisseur Interface Oxyde de silicium Piège SiO2 Composé IV-VI
- Keyword (en)
- MOS capacitor Oxide layer Thickness Interface Silicon oxides Trap IV-VI compound
- Keyword (es)
- Capacidad MOS Capa óxido Espesor Interfase Trampa Compuesto IV-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516661
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.070 
https://dx.doi.org/10.1016/j.mee.2013.03.070
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