Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate
- Author
- CHAKRABARTI, B1 2 ; VOGEL, E. M2
[1] The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX 75080, United States
[2] Ceorgia Institute of Technology, 771 Ferst Drive, Atlanta, GA 30318, United States - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 193-196, 4 p ; ref : 8 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Forming-free operation Multi-level switching Resistive switching
- Keyword (fr)
- Addition titane Circuit intégré Commutation Dopage Matériau dopé Mémoire accès direct Méthode ALE Méthode couche atomique Nanostratifié Recuit Système n niveaux Température recuit Transistor Transition conductivité électrique 8535 Mémoire non volatile
- Keyword (en)
- Titanium addition Integrated circuit Switching Doping Doped materials Random access memory Atomic layer epitaxial growth Atomic layer method Nanolaminate Annealing Multilevel system Annealing temperature Transistor Electrical conductivity transitions Non volatile memory
- Keyword (es)
- Adición titanio Circuito integrado Conmutación Doping Memoria acceso directo Método capa atómica Nanoestratificado Recocido Sistema n niveles Temperatura recocido Transistor Memoria no volátil
- Keyword (de)
- Titanzusatz Integrierte Schaltung Dopen Gluehen Gluehtemperatur Halbleiteruebergang
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40E Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11C Production techniques / 001D11C02 Heat treatment / 001D11C02A Annealing
- Discipline
- Electronics Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516685
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.092 
https://dx.doi.org/10.1016/j.mee.2013.03.092
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