High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure
- Author
- WU, Min-Lin1 ; WU, Yung-Hsien1 ; LYU, Rong-Jhe1 ; CHAO, Chun-Yen1 ; WU, Chao-Yi1 ; LIN, Chia-Chun1 ; CHEN, Lun-Lun1
[1] Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 300, Taiwan, Province of China - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 216-219, 4 p ; ref : 18 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Ge MOS devices Interface trap density Reliability Surface passivation Thermal oxidation YGeOx
- Keyword (fr)
- Approximation champ effectif Caractéristique capacité tension Champ électrique Contrainte thermique Couche superficielle Courant faible Courant fuite Densité état Diélectrique permittivité élevée Défaut cristallin Effet champ électrique Endommagement Etat interface Germanium Interface Liaison disponible Oxydation Passivation Piège Piégeage porteur charge Spectre photoélectron RX Structure MOS Tension bande plate Traitement surface Instabilité thermique de la polarisation
- Keyword (en)
- Effective field approximation Voltage capacity curve Electric field Thermal stress Surface layer Low current Leakage current Density of states High k dielectric Crystal defect Electric field effect Damaging Interface state Germanium Interface Dangling bond Oxidation Passivation Trap Charge carrier trapping X-ray photoelectron spectra MOS structure Flat band voltage Surface treatment Bias temperature instability
- Keyword (es)
- Aproximación campo efectivo Característica capacidad tensión Campo eléctrico Tensión térmica Capa superficial Corriente débil Corriente escape Densidad estado Dieléctrico alta constante dieléctrica Defecto cristalino Efecto campo eléctrico Deterioración Estado interfase Germanio Interfase Enlace disponible Oxidación Pasivación Trampa Captura portador carga Estructura MOS Voltaje banda llana Tratamiento superficie
- Keyword (de)
- Elektrisches Feld Waermespannung Oberflaechenschicht Kriechstrom Zustandsdichte Germanium Grenzflaeche Oxidation Passivierung Oberflaechenbehandlung
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11C Production techniques / 001D11C06 Surface treatment
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11E Corrosion / 001D11E01 Corrosion mechanisms
- Discipline
- Electronics Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516691
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.075 
https://dx.doi.org/10.1016/j.mee.2013.03.075
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