Superior reliability of high mobility (Si)Ge channel pMOSFETs
- Author
- FRANCO, J1 ; KACZER, B1 ; GROESENEKEN, G3 ; TOLEDANO-LUQUE, M1 ; ROUSSEL, Ph. J1 ; CHO, M1 ; KAUERAUF, T1 ; MITARD, J1 ; ENEMAN, G1 ; WITTERS, L1 ; GRASSER, T2
[1] Imec, Kapeldreef 75, 3001 Leuven, Belgium
[2] Institute for Microelectronics, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Wien, Austria
[3] ESAT Dept., KU Leuven, 3001 Leuven, Belgium - Issue title
- Insulating Films on Semiconductors 2013
- Author (monograph)
- MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece - Source
Microelectronic engineering. 2013, Vol 109, pp 250-256, 7 p ; ref : 34 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Ge NBTI Reliability SiGe Variability pMOSFET
- Keyword (fr)
- Alliage Ge Si Alliage binaire Bruit basse fréquence Contrainte thermique Couche ultramince Disruption électrique Découplage Défaut Dépendance du temps Empilement Endommagement Fiabilité Germanium Mode empilement Nanoélectronique Oxyde d'hafnium Oxyde de silicium Porteur chaud Robustesse Technologie PMOS Transistor MOSFET 8530T 8535 HfO2 Instabilité thermique de la polarisation SiGe SiO2 Alliage semiconducteur Composé IV-VI
- Keyword (en)
- Ge-Si alloys Binary alloy 1/f noise Thermal stress Ultrathin films Electric breakdown Decoupling Defect Time dependence Stacking Damaging Reliability Germanium Stacking sequence Nanoelectronics Hafnium oxide Silicon oxides Hot carrier Robustness PMOS technology MOSFET Bias temperature instability Semiconductor alloys IV-VI compound
- Keyword (es)
- Aleación binaria Ruido baja frecuencia Tensión térmica Disrupción eléctrica Desacoplamiento Defecto Dependencia del tiempo Apilamiento Deterioración Fiabilidad Germanio Modo apilamiento Nanoelectrónica Hafnio óxido Portador caliente Robustez Tecnología PMOS Compuesto IV-VI
- Keyword (de)
- Waermespannung Fehler Zuverlaessigkeit Germanium Hafniumoxid
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids / 001B70G22J Dielectric breakdown and space-charge effects
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11G Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology / 001D11G05 Fractures
- Discipline
- Electronics Metals. Metallurgy Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27516699
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2013.03.001 
https://dx.doi.org/10.1016/j.mee.2013.03.001
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"109\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"250\";s:8:\"\u0000*\u0000epage\";s:3:\"256\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FRANCO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"KACZER, B\";i:1;s:14:\"GROESENEKEN, G\";i:2;s:17:\"TOLEDANO-LUQUE, M\";i:3;s:14:\"ROUSSEL, Ph. J\";i:4;s:6:\"CHO, M\";i:5;s:11:\"KAUERAUF, T\";i:6;s:9:\"MITARD, J\";i:7;s:9:\"ENEMAN, G\";i:8;s:10:\"WITTERS, L\";i:9;s:10:\"GRASSER, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:39:\"Insulating Films on Semiconductors 2013\";s:8:\"\u0000*\u0000title\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"109\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"250\";s:8:\"\u0000*\u0000epage\";s:3:\"256\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FRANCO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"KACZER, B\";i:1;s:14:\"GROESENEKEN, G\";i:2;s:17:\"TOLEDANO-LUQUE, M\";i:3;s:14:\"ROUSSEL, Ph. J\";i:4;s:6:\"CHO, M\";i:5;s:11:\"KAUERAUF, T\";i:6;s:9:\"MITARD, J\";i:7;s:9:\"ENEMAN, G\";i:8;s:10:\"WITTERS, L\";i:9;s:10:\"GRASSER, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:39:\"Insulating Films on Semiconductors 2013\";s:8:\"\u0000*\u0000title\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"109\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"250\";s:8:\"\u0000*\u0000epage\";s:3:\"256\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FRANCO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"KACZER, B\";i:1;s:14:\"GROESENEKEN, G\";i:2;s:17:\"TOLEDANO-LUQUE, M\";i:3;s:14:\"ROUSSEL, Ph. J\";i:4;s:6:\"CHO, M\";i:5;s:11:\"KAUERAUF, T\";i:6;s:9:\"MITARD, J\";i:7;s:9:\"ENEMAN, G\";i:8;s:10:\"WITTERS, L\";i:9;s:10:\"GRASSER, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:39:\"Insulating Films on Semiconductors 2013\";s:8:\"\u0000*\u0000title\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"109\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"250\";s:8:\"\u0000*\u0000epage\";s:3:\"256\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FRANCO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"KACZER, B\";i:1;s:14:\"GROESENEKEN, G\";i:2;s:17:\"TOLEDANO-LUQUE, M\";i:3;s:14:\"ROUSSEL, Ph. J\";i:4;s:6:\"CHO, M\";i:5;s:11:\"KAUERAUF, T\";i:6;s:9:\"MITARD, J\";i:7;s:9:\"ENEMAN, G\";i:8;s:10:\"WITTERS, L\";i:9;s:10:\"GRASSER, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:39:\"Insulating Films on Semiconductors 2013\";s:8:\"\u0000*\u0000title\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2013.03.001\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"109\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"250\";s:8:\"\u0000*\u0000epage\";s:3:\"256\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FRANCO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"KACZER, B\";i:1;s:14:\"GROESENEKEN, G\";i:2;s:17:\"TOLEDANO-LUQUE, M\";i:3;s:14:\"ROUSSEL, Ph. J\";i:4;s:6:\"CHO, M\";i:5;s:11:\"KAUERAUF, T\";i:6;s:9:\"MITARD, J\";i:7;s:9:\"ENEMAN, G\";i:8;s:10:\"WITTERS, L\";i:9;s:10:\"GRASSER, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:39:\"Insulating Films on Semiconductors 2013\";s:8:\"\u0000*\u0000title\";s:61:\"Superior reliability of high mobility (Si)Ge channel pMOSFETs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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