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Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium

Author
KOLMER, Marek1 ; GODLEWSKI, Szymon1 ; LIS, Jakub1 ; SUCH, Bartosz1 ; KANTOROVICH, Lev2 ; SZYMONSKI, Marek1
[1] Centre for Nanometer-Scale Science and Advanced Materials, NANOSAM, Faculty of Physics, Astronomy, and Applied Computer Science, Jagiellonian University, Reymonta Str. 4, 30-059 Krakow, Poland
[2] Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom
Issue title
Insulating Films on Semiconductors 2013
Author (monograph)
MAJKUSIAK, Bogdan (Editor)1 ; LUKASIAK, Lidia (Editor)2
[1] Warsaw University of Technology, Poland
[2] National Center for Scientific Research 'Demokritos', Greece
Source

Microelectronic engineering. 2013, Vol 109, pp 262-265, 4 p ; ref : 19 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Atomic-scale logic gates Dangling bond nanostructures Hydrogen passivated germanium STM
Keyword (fr)
Circuit logique Désorption Fabrication microélectronique Faisabilité Flambage Germanium Hydrogène Implémentation Liaison disponible Lithographie Microscopie tunnel balayage Nanostructure Passivation Porte logique Propriété électronique Semiconducteur Structure électronique 6865 7321 7322 8116N 8540H
Keyword (en)
Logic circuit Desorption Microelectronic fabrication Feasibility Buckling Germanium Hydrogen Implementation Dangling bond Lithography Scanning tunneling microscopy Nanostructure Passivation Logic gate Electronic properties Semiconductor materials Electronic structure
Keyword (es)
Circuito lógico Desorción Fabricación microeléctrica Practicabilidad Pandeo Germanio Hidrógeno Implementación Enlace disponible Litografía Microscopía túnel barrido Nanoestructura Pasivación Puerta lógica Propiedad electrónica Semiconductor(material) Estructura electrónica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A15 Methods of electronic structure calculations

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16N Nanolithography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A6 Digital circuits

Discipline
Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27516701

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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