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The Influence of CeO2 Nano-Dots Decoration on Substrates on Flux Pinning Strength in Tl2Ba2CaCu2O8 Thin Films

Author
LU JI1 ; XIAOXIN GAO1 ; FENG SONG3 ; SHAOLIN YAN1 ; DEYONG GE1 ; WEI XIE1 ; PEI WANG1 ; XINJIE ZHAO1 ; ZHENG WANG2 ; MING HE1 ; XU ZHANG1 ; WEI LI3
[1] Department of Electronics, Nankai University, Tianjin 300071, China
[2] Purple Mountain Observatory, CAS, Nanjing, Jiangsu 210008, China
[3] College of Physics, Nankai University, Tianjin 300071, China
Conference title
THE 2012 APPLIED SUPERCONDUCTIVITY CONFERENCE Portland, OR, USA, October 7-12, 2012 MATERIALS
Conference name
The 2012 APPLIED SUPERCONDUCTIVITY CONFERENCE (Portland, OR 2012-10-07)
Author (monograph)
Institute of Electrical and Electronics Engineers (IEEE), New York, NY, United States (Organiser of meeting)
Source

IEEE transactions on applied superconductivity. 2013, Vol 23, Num 3 ; 80015.1-80015.5 ; 3 ; ref : 18 ref

ISSN
1051-8223
Scientific domain
Electronics; Electrical engineering
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Author keyword
CeO2 Tl-2212 pinning center
Keyword (fr)
Aluminate de lanthane Ancrage flux Baryum Calcium Cuivre Thallium Oxyde Mixte Couche mince Courant continu Densité courant critique Défaut Microscopie force atomique Microscopie électronique balayage Monocristal Nanopoint Nanostructure Oxyde d'aluminium Oxyde de cérium Oxyde de lanthane Pulvérisation cathodique Pulvérisation haute fréquence Recuit Résistance mécanique Traitement matériau Traitement thermique 7425Q 7425S CeO2 Cuprate à base de thallium LaAlO3 Tl2Ba2CaCu2O8
Keyword (en)
Lanthanum aluminate Flux pinning Barium Calcium Copper Thallium Oxides Mixed Thin films Direct current Critical current density Defects Atomic force microscopy Scanning electron microscopy Monocrystals Nanodot Nanostructures Aluminium oxide Cerium oxide Lanthanum oxide Cathode sputtering Radiofrequency sputtering Annealing Mechanical strength Material processing Heat treatments
Keyword (es)
Lantano aluminato Mixto Densidad corriente crítica Nanopunto Aluminio óxido Cerio óxido Lantano óxido Pulverización alta frecuencia Tratamiento material
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20F Deformation and plasticity (including yield, ductility, and superplasticity)

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D25 Properties of type I and type II superconductors / 001B70D25Q Vortex lattices ,flux pinning, flux creep

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40E Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27529807

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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