Fabrication and photovoltaic properties of Cu2ZnSnS4/i-a-Si/n-a-Si thin film solar cells
- Author
- FENG JIANG1 ; HONGLIE SHEN1 2
[1] College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
[2] Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China - Source
Applied surface science. 2013, Vol 280, pp 138-143, 6 p ; ref : 33 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- CZTS Heterojunction Sulfurization a-Si p―i―n p―n
- Keyword (fr)
- Cellule solaire Couche mince Hétérojonction Silicium Sulfuration Si
- Keyword (en)
- Solar cells Thin films Heterojunctions Silicon Sulfidation
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27553282
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2013.04.110 
https://dx.doi.org/10.1016/j.apsusc.2013.04.110
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