Fabrication of flexible conductive graphene/Ag/Al-doped zinc oxide multilayer films for application in flexible organic light-emitting diodes
- Author
- FUSHAN LI1 ; ZHIXIAO LIN1 ; BEIBEI ZHANG1 ; YONGZHI ZHANG1 ; CHAOXING WU1 ; TAILIANG GUO1
[1] Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, China - Source
Organic electronics (Print). 2013, Vol 14, Num 9, pp 2139-2143, 5 p ; ref : 18 ref
- ISSN
- 1566-1199
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- AZO FOLED Graphene Multilayer Transparent conductive film
- Keyword (fr)
- Addition aluminium Caractéristique optique Caractéristique électrique Coefficient absorption Complexe d'aluminium Couche mince transparente Diode électroluminescente organique Dispositif optoélectronique Dégradation Dépôt chimique phase vapeur Dérivé du biphényle Electronique organique Endommagement Essai flexion Evaluation performance Fabrication microélectronique Facteur transmission Fluorure de lithium Graphène Lumière verte Matériau conducteur Matériau dopé Matériau transparent Multicouche Oxyde de zinc Propriété optique Propriété électrique Pulvérisation cathodique Revêtement multicouche Structure flexible 7867 8105T 8105U 8115G 8540H 8560J Semiconducteur bande interdite nulle
- Keyword (en)
- Aluminium addition Optical characteristic Electrical characteristic Absorption coefficient Aluminium complex Transparent thin film Organic light emitting diodes Optoelectronic device Degradation Chemical vapor deposition Biphenyl derivatives Organic electronics Damaging Bending test Performance evaluation Microelectronic fabrication Transmittance Lithium fluoride Graphene Green light Conducting material Doped materials Transparent material Multiple layer Zinc oxide Optical properties Electrical properties Cathodic sputtering Multilayer coating Flexible structure Zero band gap semiconductors
- Keyword (es)
- Adicion aluminio Característica óptica Característica eléctrica Coeficiente absorción Aluminio complejo Película transparente Dispositivo optoelectrónico Degradación Depósito químico fase vapor Bifenilo derivado Electrónica orgánica Deterioración Ensayo flexion Evaluación prestación Fabricación microeléctrica Factor transmisión Litio fluoruro Graphene Luz verde Material conductor Material transparente Capa múltiple Zinc óxido Propiedad óptica Propiedad eléctrica Pulverización catódica Revestimiento multicapa Estructura flexible
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27584522
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.orgel.2013.05.023 
https://dx.doi.org/10.1016/j.orgel.2013.05.023
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