Temperature-Stable Silicon Oxide (SilOx) Micromechanical Resonators
- Author
- TABRIZIAN, Roozbeh1 ; CASINOVI, Giorgio1 ; AYAZI, Farrokh1
[1] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States - Source
I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2656-2663, 8 p ; ref : 23 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- High quality factor homogenous composite low insertion loss silicon dioxide pillar matrix silicon oxide (SilOx), temperature coefficient of frequency (TCF) temperature compensated crystal oscillator (TCXO) temperature compensation
- Keyword (fr)
- Caractéristique thermique Coefficient température Compensation thermique Dérive fréquence Effet température Facteur qualité Implémentation Matériau composite Monocristal Oscillateur quartz Oxyde de silicium Perte insertion Résonateur micromécanique Silicium Stabilité thermique SiO2 Composé IV-VI
- Keyword (en)
- Thermal characteristic Temperature coefficient Thermal compensation Frequency drift Temperature effect Q factor Implementation Composite material Single crystal Quartz oscillator Silicon oxides Insertion loss Micromechanical resonators Silicon Thermal stability IV-VI compound
- Keyword (es)
- Característica térmica Coeficiente temperatura Compensación térmica Deriva frecuencia Efecto temperatura Factor calidad Implementación Material compuesto Monocristal Oscilador cuarzo Pérdida inserción Silicio Estabilidad térmica Compuesto IV-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A1 Oscillators, resonators, synthetizers
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27599176
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2013.2270434 
https://dx.doi.org/10.1109/TED.2013.2270434
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