Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
- Author
- RI GUO JIN1 ; YAGI, Shuhei1 ; HIJIKATA, Yasuto1 ; KUBOYA, Shigeyuki2 ; ONABE, Kentaro2 ; KATAYAMA, Ryuji3 ; YAGUCHI, Hiroyuki1
[1] Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura-ku, Saitama University, Saitama 338-8570, Japan
[2] Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
[3] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan - Conference title
- The 17th International Conference on Molecular Beam Epitaxy
- Conference name
- MBE2012 International Conference on Molecular Beam Epitaxy (17 ; Nara 2012-09-23)
- Author (monograph)
- AKIMOTO, Katzuhiro (Editor)1 ; SUEMASU, Takashi (Editor)1 ; OKUMURA, Hajime (Editor)
[1] University of Tsukuba, Japan - Source
Journal of crystal growth. 2013, Vol 378, pp 85-87, 3 p ; ref : 6 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Crystal structure A3. Molecular beam epitaxy B1. Alloys B3. Semiconducting gallium arsenide High resolution X-ray diffraction
- Keyword (fr)
- Arséniure de gallium Composé III-V Couche épitaxique Diffraction RX Effet concentration Epitaxie jet moléculaire Erbium Espace réciproque Méthode SSMBE Réseau réciproque Semiconducteur III-V Structure blende Structure cristalline 6166 8115H GaAs Substrat GaAs
- Keyword (en)
- Gallium arsenides III-V compound Epitaxial layers XRD Quantity ratio Molecular beam epitaxy Erbium Reciprocal space Solid source molecular beam epitaxy Reciprocal lattice III-V semiconductors Blende structure Crystal structure
- Keyword (es)
- Compuesto III-V Espacio recíproco Método SSMBE Red recíproca Estructura blenda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27670377
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2012.12.043 
https://dx.doi.org/10.1016/j.jcrysgro.2012.12.043
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