InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm
- Author
- GOZU, Shin-Ichiro1 ; MOZUME, Teruo1 ; KUWATSUKA, Haruhiko1 ; ISHIKAWA, Hiroshi1
[1] National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 205-8568, Japan - Conference title
- The 17th International Conference on Molecular Beam Epitaxy
- Conference name
- MBE2012 International Conference on Molecular Beam Epitaxy (17 ; Nara 2012-09-23)
- Author (monograph)
- AKIMOTO, Katzuhiro (Editor)1 ; SUEMASU, Takashi (Editor)1 ; OKUMURA, Hajime (Editor)
[1] University of Tsukuba, Japan - Source
Journal of crystal growth. 2013, Vol 378, pp 134-136, 3 p ; ref : 11 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Low dimensional structures A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III―V materials
- Keyword (fr)
- Absorption optique Arséniure d'aluminium Arséniure d'indium Arséniure de gallium Bande conduction Composé III-V Discontinuité bande Déformation résiduelle Epitaxie jet moléculaire Nanomatériau Puits quantique Semiconducteur III-V Spectre absorption Transition interbande 8107 8115H AlAs InAlAs InGaAs
- Keyword (en)
- Optical absorption Aluminium arsenides Indium arsenides Gallium arsenides Conduction bands III-V compound Band offset Residual strain Molecular beam epitaxy Nanostructured materials Quantum wells III-V semiconductors Absorption spectra Interband transitions
- Keyword (es)
- Absorción óptica Compuesto III-V Discontinuidad banda Deformación residual
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27670389
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2012.11.023 
https://dx.doi.org/10.1016/j.jcrysgro.2012.11.023
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