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Molecular beam epitaxial growth of graphene using cracked ethylene

Author
MAEDA, Fumihiko1 ; HIBINO, Hiroki1
[1] NTT Basic research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 23-0198, Japan
Conference title
The 17th International Conference on Molecular Beam Epitaxy
Conference name
MBE2012 International Conference on Molecular Beam Epitaxy (17 ; Nara 2012-09-23)
Author (monograph)
AKIMOTO, Katzuhiro (Editor)1 ; SUEMASU, Takashi (Editor)1 ; OKUMURA, Hajime (Editor)
[1] University of Tsukuba, Japan
Source

Journal of crystal growth. 2013, Vol 378, pp 404-409, 6 p ; ref : 25 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
A1. Nanostructures A1. Surface processes A3. Molecular beam epitaxy B1. Graphene B1. Nanomaterials
Keyword (fr)
Analyse surface Condition opératoire Diffusion(transport) Dépendance température Epitaxie jet moléculaire Ethanol Ethylène Graphène Microscopie force atomique Morphologie surface Mécanisme croissance Nanomatériau Nanostructure Niveau coeur Spectre Raman Vide poussé Vitesse dépôt 6630 8105U 8110A 8115H
Keyword (en)
Surface analysis Operating conditions Diffusion Temperature dependence Molecular beam epitaxy Ethanol Ethylene Graphene Atomic force microscopy Surface morphology Growth mechanism Nanostructured materials Nanostructures Core levels Raman spectra High vacuum Deposition rate
Keyword (es)
Condición operatoria Graphene Mecanismo crecimiento Velocidad deposición
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27670455

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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