The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures
- Author
- ALTUNTAS, H1 ; OZCELIK, S2
[1] Department of Physics, Faculty of Science, Cankiri Karatekin University, 18100 Cankiri, Turkey
[2] Department of Physics, Faculty of Science, Cazi University, 06500 Ankara, Turkey - Source
Journal of alloys and compounds. 2013, Vol 577, pp 143-147, 5 p ; ref : 32 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Au/SiO2/GaAs Schottky diodes I-V characteristics Insulator layer Interface states
- Keyword (fr)
- Arséniure de gallium Barrière Schottky Caractéristique courant tension Composé III-V Diode barrière Schottky Dépendance température Emission thermoionique Etat interface Haute température Hauteur barrière Propriété électrique Résistance série Semiconducteur III-V 7330 7940 8530H
- Keyword (en)
- Gallium arsenides Schottky barriers IV characteristic III-V compound Schottky barrier diodes Temperature dependence Thermionic emission Interface states High temperature Barrier height Electrical properties Series resistance III-V semiconductors
- Keyword (es)
- Compuesto III-V Alta temperatura Resistencia en serie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I40 Thermionic emission
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27699599
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.jallcom.2013.04.098 
https://dx.doi.org/10.1016/j.jallcom.2013.04.098
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/j.jallcom.2013.04.098\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"577\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"143\";s:8:\"\u0000*\u0000epage\";s:3:\"147\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"ALTUNTAS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:10:\"OZCELIK, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/j.jallcom.2013.04.098\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"577\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"143\";s:8:\"\u0000*\u0000epage\";s:3:\"147\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"ALTUNTAS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:10:\"OZCELIK, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/j.jallcom.2013.04.098\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/j.jallcom.2013.04.098\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"577\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"143\";s:8:\"\u0000*\u0000epage\";s:3:\"147\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"ALTUNTAS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:10:\"OZCELIK, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/j.jallcom.2013.04.098\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:3:\"577\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"143\";s:8:\"\u0000*\u0000epage\";s:3:\"147\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"ALTUNTAS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:10:\"OZCELIK, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:91:\"The interface states and series resistance analyzing of Au\/SiO2\/n-GaAs at high temperatures\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
