Point defects in Cd(Zn)Te and TlBr: Theory
- Autor
- LORDI, Vincenzo1
[1] Lawrence Livermore National Laboratory, 7000 East Avenue, L-413, Livermore, CA 94550, United States - Titulo de la publicación
- Compound Semiconductors and Scintillators for Radiation Detection Applications: A Special Tribute to the Research of Michael Schieber
- Autor ( monografía)
- BURGER, Arnold (Editor)1 2 ; JAMES, Ralph (Editor)3
[1] Department of Life and Physical Sciences, Fisk University, 1000, 17th Avenue North, Nashville, TN 37208, United States
[2] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[3] Brookhaven National Laboratory, Upton, NY 11973, United States - Fuente
Journal of crystal growth. 2013, Vol 379, pp 84-92, 9 p ; ref : 74 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. Computer simulation A1. Diffusion A1. Doping A1. Point defects B1. Halides B2. Semiconducting materials
- Palabra clave (fr)
- Addition arsenic Alliage(action) Article synthèse Conductivité ionique Conductivité électronique Diffusion(transport) Dopage Défaut cristallin Défaut ponctuel Halogénure Lacune Méthode fonctionnelle densité Propriété thermodynamique Propriété électronique Rayonnement haute énergie Recuit Semiconducteur II-VI Simulation ordinateur Technologie matériau 6172J 6630 6630D 7115M Cd1-xZnxTe CdTe
- Palabra clave (in)
- Arsenic additions Alloying Reviews Ionic conductivity Electronic conductivity Diffusion Doping Crystal defects Point defects Halides Vacancies Density functional method Thermodynamic properties Electronic properties High energy radiation Annealing II-VI semiconductors Computerized simulation Material engineering
- Palabra clave (es)
- Conductividad electrónica Doping Propiedad electrónica Radiación alta energía Tecnología material
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30D Theory of diffusion and ionic conduction in solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A15 Methods of electronic structure calculations
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 27716235
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.03.003 
https://dx.doi.org/10.1016/j.jcrysgro.2013.03.003
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