Stability Considerations for Silicon Carbide Field-Effect Transistors
- Author
- LEMMON, Andrew1 ; MAZZOLA, Michael1 ; GAFFORD, James1 ; PARKER, Chris1
[1] Center for Advanced Vehicular Systems, Mississippi State University, MS 39759, United States - Source
IEEE transactions on power electronics. 2013, Vol 28, Num 10, pp 4453-4459, 7 p ; ref : 19 ref
- CODEN
- ITPEE8
- ISSN
- 0885-8993
- Scientific domain
- Electrical engineering
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- FETs oscillation resonance shoot-through silicon carbide
- Keyword (fr)
- Capacité électrique Commutateur Convertisseur pont Electronique puissance Etude expérimentale Oscillateur Oscillation Silicium Simulation système Transistor effet champ
- Keyword (en)
- Capacitance Selector switch Bridge convertor Power electronics Experimental study Oscillator Oscillation Silicon System simulation Field effect transistor
- Keyword (es)
- Capacitancia Conmutador Convertidor puente Electrónica potencia Estudio experimental Oscilador Oscilación Silicio Simulación sistema Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05D Electrical machines / 001D05D03 Convertors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27783721
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TPEL.2012.2226473 
https://dx.doi.org/10.1109/TPEL.2012.2226473
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