EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition
- Autor
- MINO, Lorenzo1 ; GIANOLIO, Diego2 ; BARDELLI, Fabrizio3 ; PRESTIPINO, Carmelo4 ; SENTHIL KUMAR, E5 ; BELLARMINE, F5 ; RAMANJANEYULU, M5 ; LAMBERTI, Carlo1 ; RAMACHANDRA RAO, M. S5
[1] Department of Chemistry, NIS Centre of Excellence, and INSTM Reference Center, University of Turin, via P Giuria 7, 10125 Torino, Italy
[2] Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 ODE, United Kingdom
[3] Institut des Sciences de la Terre, Université Grenoble-1, 1381 Rue de la Piscine, 38041 Grenoble, France
[4] Institut des Sciences Chimiques de Rennes, Université de Rennes 1, UMR CNRS-UR1 6226, Campus de Beaulieu, Bâtiment 10B, 35042 Rennes, France
[5] Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology, Madras-600036, India - Fuente
Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 38 ; 385402.1-385402.7 ; ref : 51 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Institute of Physics, Bristol
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Addition lithium Addition nickel Agrégat solide Codopage Concentration impureté Couche mince Dopage Dépôt laser pulsé EXAFS Facteur Debye Waller Longueur liaison Nanoamas Nanoparticule Oxyde de zinc Site impureté Structure locale XANES ZnO
- Palabra clave (in)
- Lithium additions Nickel additions Solid clusters Codoping Impurity density Thin films Doping Pulsed laser deposition EXAFS Debye-Waller factor Bond lengths Nanocluster Nanoparticles Zinc oxide Impurity site Local structure XANES
- Palabra clave (es)
- Codrogado Concentración impureza Doping Nanomontón Zinc óxido Sitio impureza Estructura local
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 27785146
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/25/38/385402 
https://dx.doi.org/10.1088/0953-8984/25/38/385402
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