A Bistable Electrostatic Silicon Nanofin Relay for Nonvolatile Memory Application
- Author
- BOWOON SOON1 2 ; ELDWIN JIAQIANG NG3 ; SINGH, Navab1 ; MINGLIN TSAI, Julius4 ; YOU QIAN1 2 ; CHENGKUO LEE2
[1] Institute of Microelectronics, Agency for Science, Technology and Research, Singapore 117685, Singapore
[2] Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
[3] Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, United States
[4] Advanced Technology, InvenSense, Inc., Sunnyvale, CA 94089, United States - Source
Journal of microelectromechanical systems. 2013, Vol 22, Num 5, pp 1004-1006, 3 p ; ref : 14 ref
- ISSN
- 1057-7157
- Scientific domain
- Electronics; Mechanics acoustics; Physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Bistable Nanoelectromechanical systems electrostatic nonvolatile memory relay switch van der Waals
- Keyword (fr)
- Bistabilité Commutateur Dispositif nanoélectromécanique Hystérésis Interaction van der Waals Mémoire non volatile Nanostructure Silicium Tension collage
- Keyword (en)
- Bistability Switches Nanoelectromechanical device Hysteresis Van der Waals interaction Non volatile memory Nanostructures Silicon Pull in voltage
- Keyword (es)
- Dispositivo nanoelectromecánico Interacción van der Waals Memoria no volátil Tensión encolado
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G10 Mechanical instruments, equipment and techniques / 001B00G10C Micromechanical devices and systems
- Discipline
- Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27816027
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JMEMS.2013.2266859 
https://dx.doi.org/10.1109/JMEMS.2013.2266859
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