The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
- Author
- FIAT, S1 ; KORALLI, P2 ; BACAKSIZ, E3 ; GIANNAKOPOULOS, K. P4 ; KOMPITSAS, M5 ; MANOLAKOS, D. E2 ; CANKAYA, G6
[1] GaziosmanpaşaUniversity, Faculty of Arts and Sciences, Physics Department, 60240 Tokat, Turkey
[2] School of Mechanical Engineering, National Technical University of Athens, 9, Iroon Polytechniou, Zografos, 15780 Athens, Greece
[3] Karadeniz Technical University, Faculty of Arts and Sciences, Physics Department, 61080 Trabzon, Turkey
[4] N.C.S.R. Demokritos, Institute for Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems, 15310 Aghia Paraskevi, Athens, Greece
[5] National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 11635 Athens, Greece
[6] Yıldırım Beyazıt University, Faculty of Engineering and Natural Sciences, Materials Engineering, 06030 Ankara, Turkey - Source
Thin solid films. 2013, Vol 545, pp 64-70, 7 p ; ref : 34 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Atomic force microscopy Chalcopyrite compounds Copper indium gallium selenide Copper indium gallium telluride Electron-beam evaporation Optical characterization X-ray diffraction
- Keyword (fr)
- Bande interdite photonique Chalcopyrite Couche mince Cuivre Diffraction RX Dépendance température Evaporation faisceau électronique Gallium Indium Microscopie force atomique Microscopie électronique balayage Microstructure Morphologie surface Orientation préférentielle Paramètre cristallin Plan cristallographique Propriété optique Recuit thermique Spectre absorption Stoechiométrie Structure chalcopyrite Structure cristalline Séléniure Température recuit 6855J 7866 8115K
- Keyword (en)
- Photonic band gap Chalcopyrite Thin films Copper XRD Temperature dependence Electron beam evaporation Gallium Indium Atomic force microscopy Scanning electron microscopy Microstructure Surface morphology Preferred orientation Lattice parameters Crystallographic plane Optical properties Thermal annealing Absorption spectra Stoichiometry Chalcopyrite structure Crystal structure Selenides Annealing temperature
- Keyword (es)
- Orientación preferencial Plano cristalográfico Recocido térmico Estructura calcopirita Temperatura recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27823313
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2013.07.032 
https://dx.doi.org/10.1016/j.tsf.2013.07.032
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