Continuous CoSi2 layers in silicon synthesized by Co-ion implantation
- Author
- ZHANG, J1 2 3 ; YE, X4 ; CHANG, J3 ; BERNARD, S5
[1] International Centre for Materials Physics, Academia Sinica, Shenyang 110015, China
[2] Chinese Centre of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing, China
[3] Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
[4] Department of Chemistry, Tsinghua University, Beijing 100084, China
[5] Laboratoire d'Electronique, Ecole Centrale de Lyon, Lyon 69131, Ecully, France - Source
Materials letters (General ed.). 1997, Vol 32, Num 2-3, pp 121-126 ; ref : 15 ref
- CODEN
- MLETDJ
- ISSN
- 0167-577X
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Condensed state physics; Polymers, paint and wood industries
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition cobalt Caractérisation Conductivité électrique Couche mince Densité courant Etude expérimentale Implantation ion Matériau semiconducteur Profil profondeur Recuit thermique Silicium Siliciuration Co Si Co:Si CoSi2 Non métal
- Keyword (en)
- Cobalt additions Characterization Electric conductivity Thin films Current density Experimental study Ion implantation Semiconductor materials Depth profiles Thermal annealing Silicon Siliconizing Nonmetals
- Keyword (es)
- Caracterización Recocido térmico Siliciuración
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2787397
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0167-577X(97)00031-1 
https://dx.doi.org/10.1016/S0167-577X(97)00031-1
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