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Continuous CoSi2 layers in silicon synthesized by Co-ion implantation

Author
ZHANG, J1 2 3 ; YE, X4 ; CHANG, J3 ; BERNARD, S5
[1] International Centre for Materials Physics, Academia Sinica, Shenyang 110015, China
[2] Chinese Centre of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing, China
[3] Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
[4] Department of Chemistry, Tsinghua University, Beijing 100084, China
[5] Laboratoire d'Electronique, Ecole Centrale de Lyon, Lyon 69131, Ecully, France
Source

Materials letters (General ed.). 1997, Vol 32, Num 2-3, pp 121-126 ; ref : 15 ref

CODEN
MLETDJ
ISSN
0167-577X
Scientific domain
Crystallography; Chemical industry parachemical industry; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Addition cobalt Caractérisation Conductivité électrique Couche mince Densité courant Etude expérimentale Implantation ion Matériau semiconducteur Profil profondeur Recuit thermique Silicium Siliciuration Co Si Co:Si CoSi2 Non métal
Keyword (en)
Cobalt additions Characterization Electric conductivity Thin films Current density Experimental study Ion implantation Semiconductor materials Depth profiles Thermal annealing Silicon Siliconizing Nonmetals
Keyword (es)
Caracterización Recocido térmico Siliciuración
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2787397

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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