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The characteristics of carbon nanotubes grown at low temperature for electronic device application

Author
YONG SEOB PARK1 ; JUNSIN YI2 ; JAEHYEONG LEE2
[1] Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju, Korea, Republic of
[2] School of Information & Communications Engineering, Sungkyunkwan University, Suwon, 440―746, Korea, Republic of
Conference title
The proceedings of International Union of the Materials Research Society - International Conference in Asia 2012- IUMRS-ICA 2012
Conference name
IUMRS-ICA 2012 International Union of the Materials Research Society - International Conference in Asia 2012 (Bangalore 2013-12-16)
Author (monograph)
KIM, Doyoung (Editor)1 ; KANG, Hyunil (Editor)2 ; LEE, Taeyoon (Editor)3
International Union of the Materials Research Society (IUMRS), McKeesport, PA 15135, United States (Organiser of meeting)
Materials Research Society Korea (MRS-K), Seoul, Korea, Republic of (Organiser of meeting)
[1] Ulsan College, Korea, Republic of
[2] Hanbat University, Korea, Republic of
[3] Yonsei University, Korea, Republic of
Source

Thin solid films. 2013, Vol 546, pp 81-84, 4 p ; ref : 28 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Carbon nanotubes Microwave plasma enhanced chemical vapor deposition Sheet resistance Substrate temperature
Keyword (fr)
Catalyseur Couche tampon Cristallinité Décharge hyperfréquence Déformation Dépôt physique phase vapeur Dépôt pulvérisation Emission champ Microscopie champ proche Microscopie électronique balayage Microscopie électronique transmission Mécanisme croissance Méthane Méthode PECVD Nanomatériau Nanotube carbone Propriété surface Propriété électrique Pulvérisation cathodique Résistivité couche Spectrométrie Raman Structure bambou Synthèse nanomatériau Verre 8107 8107D 8115G 8116 Substrat verre
Keyword (en)
Catalyst Buffer layer Crystallinity Microwave discharge Deformation Physical vapor deposition Sputter deposition Field emission Scanning probe microscopy Scanning electron microscopy Transmission electron microscopy Growth mechanism Methane PECVD Nanostructured materials Carbon nanotubes Surface properties Electrical properties Cathodic sputtering Sheet resistivity Raman spectrometry Bamboo structure Nanomaterial synthesis Glass
Keyword (es)
Catalizador Capa tampón Cristalinidad Descarga hiperfrecuencia Deformación Deposición física fase vapor Emisión campo Microscopía campo próximo Microscopía electrónica barrido Microscopía electrónica transmisión Mecanismo crecimiento Metano Propiedad superficie Propiedad eléctrica Pulverización catódica Resistividad capa Espectrometría Raman Estructura bambú Síntesis nanomaterial Vidrio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication

Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01A Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry / 001C01A03 Catalysis / 001C01A03A Catalysts: preparations and properties

Discipline
General chemistry and physical chemistry Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27875226

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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