The annealing behavior of hydrogen implanted into Al-1.5 at.% Si alloy
- Author
- OGURA, M1 ; NAKATANI, N1 ; YAMAJI, N1 ; IMAI, M1 ; ITOH, A1 ; IMANISHI, N1
[1] Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto 606-01, Japan - Conference name
- International Symposium on Advanced Nuclear Energy Research (7 ; Takasaki 1996-03-18)
- Source
Radiation physics and chemistry (1993). 1997, Vol 49, Num 6, pp 645-649 ; ref : 11 ref
- ISSN
- 0969-806X
- Scientific domain
- General chemistry, physical chemistry
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition hydrogène Alliage base aluminium Alliage binaire Distribution concentration Défaut cristallin Effet température Etude expérimentale Implantation ion Joint grain Piégeage Profil profondeur Recuit Silicium alliage
- Keyword (en)
- Hydrogen additions Aluminium base alloys Binary alloys Concentration distribution Crystal defects Temperature effects Experimental study Ion implantation Grain boundaries Trapping Depth profiles Annealing Silicon alloys
- Keyword (es)
- Distribución concentración
- Keyword (de)
- Konzentrationsverteilung
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials
- Discipline
- Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2789598
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0969-806X(97)00014-5 
https://dx.doi.org/10.1016/S0969-806X(97)00014-5
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