Inductively coupled plasma reactive ion etching of magnetic tunnel junction stacks using H2O/CH4 mixture
- Author
- TEA YOUNG LEE1 ; II HOON LEE1 ; CHEE WON CHUNG1
[1] Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Korea, Republic of - Conference title
- Proceedings of the 4th International Conference on Microelectronics and Plasma Technology ICMAP 2012, Jeju, Korea
- Conference name
- ICMAP 2012 International Conference on Microelectronics and Plasma Technology (4 ; Jeju 2012-07-04)
- Author (monograph)
- LEE, Nae-Eung (Editor)1 ; HYUN WOO KIM (Editor)2 ; CHEE WON CHUNG (Editor)7 ; KIM, Chang-Il (Editor)8 ; CHAE, Heeyeop (Editor)1 ; KIM, Jiyoung (Editor)9 ; HONG, Mun Pyo (Editor)3 ; ISHIJIMA, Tatsuo (Editor)4 ; CHUNG, Chin-Wook (Editor)2 ; KIM, Hyung Jun (Editor)5 ; HYOUNG SUB KIM (Editor)1 ; JUN SIN YI (Editor)1 ; PARK, In-Sung (Editor)2 ; PU, YI-Kang (Editor)6
[1] Sungkyunkwan University, Korea, Republic of
[2] Hanyang University, Korea, Republic of
[3] Korea University, Korea, Republic of
[4] Kanazawa University, Japan
[5] Yonsei University, Korea, Republic of
[6] Tsinghua University, China
[7] Inha University, Korea, Republic of
[8] Chung-Ang University, Korea, Republic of
[9] UT Dallas, United States - Source
Thin solid films. 2013, Vol 547, pp 146-150, 5 p ; ref : 18 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- H2O/CH4/Ar Inductively coupled plasma reactive ion etching Magnetic random access memory Magnetic tunnel junction stack
- Keyword (fr)
- Anisotropie Couche barrière Emission champ Gravure ionique réactive Gravure plasma Jonction tunnel Microscopie électronique transmission Mélange gaz Mémoire accès direct Méthane Plasma couplé inductivement 5277B 5280Y 6855J 7970 Substrat MgO
- Keyword (en)
- Anisotropy Barrier layer Field emission Reactive ion etching Plasma etching Tunnel junction Transmission electron microscopy Gas mixtures Random-access storage Methane Inductively coupled plasma
- Keyword (es)
- Grabado iónico reactivo Grabado plasma Unión túnel
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications / 001B50B77B Etching and cleaning
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B80 Electric discharges / 001B50B80Y Discharges for spectral sources (including inductively coupled plasmas)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I70 Field emission, ionization, evaporation, and desorption
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27928437
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2013.04.022 
https://dx.doi.org/10.1016/j.tsf.2013.04.022
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