Interaction Between As_Hg and V_Hg in Arsenic-Doped Hg_1―xCd_xTe

Author

ZIYAN WANG¹ ; YAN HUANG^{1 2} ; XIAOSHUANG CHEN¹ ; HUXIAN ZHAO¹ ; WEN LEI³ ; WEI LU¹
[1] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
[2] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
[3] School of Electrical, Electronic and Computer Engineering, University of Western Australia, 35 Stirling Highway, Crawley, WA 6009, Australia

Conference title

2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials

Conference name

2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials (Seattle, Washington 2012-11-27)

Author (monograph)

SIVANANTHAN, S (Editor)¹ ; DHAR, N. K (Editor)²
[1] Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St., Chicago, IL, 60607, United States
[2] Defense Advanced Research Projects Agency, 3701 North Fairfax Drive, Arlington, VA, 22203-1714, United States

Source

Journal of electronic materials. 2013, Vol 42, Num 11, pp 3054-3058, 5 p ; ref : 21 ref

CODEN

JECMA5

ISSN

0361-5235

Scientific domain

Crystallography; Electronics; Metallurgy, welding; Condensed state physics

Publisher

Springer, Heidelberg

Publication country

Germany

Document type

Conference Paper

Language

English

Author keyword

Arsenic-doped Hg_1―xCd_xTe defects first-principles calculation long-range interaction

Keyword (fr)

Addition arsenic Arsenic Bande interdite Centre donneur Compensation charge Distorsion Défaut complexe Energie liaison Etat défaut Interaction donneur accepteur Interaction longue distance Lacune Méthode fonctionnelle densité Niveau défaut Propriété électronique Semiconducteur II-VI Structure électronique 7115M 7320 7350 8105D

Keyword (en)

Arsenic additions Arsenic Energy gap Donor center Charge compensation Distortion Complex defect Binding energy Defect states Donor acceptor interaction Long range interaction Vacancies Density functional method Defect level Electronic properties II-VI semiconductors Electronic structure

Keyword (es)

Centro dador Defecto complejo Interacción dador aceptor Interacción larga distancia Propiedad electrónica

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A15 Methods of electronic structure calculations

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors

Discipline

Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

27928472

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS