The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing
- Author
- LENNON, C. M1 ; ALMEIDA, L. A2 ; JACOBS, R. N2 ; BENSON, J. D2 ; SMITH, P. J2 ; MARKUNAS, J. K2 ; ARIAS, J2 3 ; PELLEGRINO, J2
[1] Corbin Company, Alexandria, VA 22314, United States
[2] U.S. Army RDECOM, CERDEC, Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060, United States
[3] RAND Corporation, Santa Monica, CA 90401, United States - Conference title
- 2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials
- Conference name
- 2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials (Seattle, Washington 2012-11-27)
- Author (monograph)
- SIVANANTHAN, S (Editor)1 ; DHAR, N. K (Editor)2
[1] Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St., Chicago, IL, 60607, United States
[2] Defense Advanced Research Projects Agency, 3701 North Fairfax Drive, Arlington, VA, 22203-1714, United States - Source
Journal of electronic materials. 2013, Vol 42, Num 11, pp 3344-3348, 5 p ; ref : 17 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Author keyword
- CdTe GaAs HgCdTe molecular beam epitaxy spectroscopic ellipsometry
- Keyword (fr)
- Arséniure de gallium Cinétique Composé III-V Ellipsométrie spectroscopique Energie activation Epaisseur couche Epitaxie jet moléculaire Méthode mesure Photodétecteur RHEED Recuit Semiconducteur II-VI Semiconducteur III-V Sublimation Température surface 0760F 6855J 8105D 8115H CdTe
- Keyword (en)
- Gallium arsenides Kinetics III-V compound Spectroscopic ellipsometry Activation energy Layer thickness Molecular beam epitaxy Measuring methods Photodetectors RHEED Annealing II-VI semiconductors III-V semiconductors Sublimation Surface temperature
- Keyword (es)
- Compuesto III-V Elipsometría espectroscópica Espesor capa
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G60 Optical instruments, equipment and techniques / 001B00G60F Polarimeters and ellipsometers
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Metrology Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27928515
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2767-9 
https://dx.doi.org/10.1007/s11664-013-2767-9
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