Temperature Distribution and Deposition Rate on Semiconductor Wafers in Low-Pressure CVD Equipment Processing Two Wafers
- Author
- WATANABE, Tomoji1 ; HIRASAWA, Shigeki1
[1] Department of Mechanical Engineering, Kobe University, Kobe, Hyogo 657-8501, Japan - Source
IEEE transactions on semiconductor manufacturing. 2013, Vol 26, Num 4, pp 572-577, 6 p ; ref : 14 ref
- ISSN
- 0894-6507
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Chemical vapor deposition electronic equipment manufacture furnaces heat treatment silicon temperature control thin films
- Keyword (fr)
- Basse pression Boucle anticipation Champ température Circuit bistable Commande température Couche mince Dépôt chimique phase vapeur Fabrication microélectronique Fabrication équipement électronique Méthode contrôle Nitrure de silicium Pastille électronique Procédé fabrication Régime permanent Semiconducteur Silicium Système commande Traitement thermique Vitesse dépôt 8115G Si3N4 Circuit séquentiel
- Keyword (en)
- Low pressure Feedforward Temperature distribution Flip-flop circuits Temperature control Thin film Chemical vapor deposition Microelectronic fabrication Electronic equipment manufacture Control method Silicon nitride Wafer Manufacturing process Steady state Semiconductor materials Silicon Control system Heat treatment Deposition rate Sequential circuit
- Keyword (es)
- Baja presión Ciclo anticipación Campo temperatura Control temperatura Capa fina Depósito químico fase vapor Fabricación microeléctrica Método control Silicio nitruro Pastilla electrónica Procedimiento fabricación Régimen permanente Semiconductor(material) Silicio Sistema control Tratamiento térmico Velocidad deposición Circuito secuencial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A6 Digital circuits
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27933379
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TSM.2013.2279257 
https://dx.doi.org/10.1109/TSM.2013.2279257
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