Material properties of Pb1-xSnxSe epilayers on Si and their correlation with the performance of infrared photodiodes
- Author
- FACH, A1 ; JOHN, J1 ; MÜLLER, P1 ; PAGLINO, C1 ; ZOGG, H1
[1] Thin Film Physics Group, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH-Teil Technopark, 8005 Zürich, Switzerland - Conference title
- Creep and stress relaxation in miniature structures and components
- Conference name
- Materials Week'96. Symposium (Cincinnati, Ohio 1996-10-08)
- Author (monograph)
- Minerals, Metals and Materials Society. Structural Materials Division. Non-Ferrous Metals Committee (Funder/Sponsor)
- Source
Journal of electronic materials. 1997, Vol 26, Num 7, pp 873-877 ; ref : 13 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Calcium Fluorure Composé II-VI Composé binaire Composé ternaire Densité dislocation Détecteur infrarouge Etain Séléniure Etude expérimentale Photodiode Plomb Séléniure Propriété matériau Silicium Ca F CaF2 Pb Se Sn Pb1-xSnxSe
- Keyword (en)
- Calcium Fluorides II-VI compound Binary compound Ternary compound Dislocation density Infrared detector Tin Selenides Experimental study Photodiode Lead Selenides Properties of materials Silicon
- Keyword (es)
- Calcio Fluoruro Compuesto II-VI Compuesto binario Compuesto ternario Densidad dislocación Detector rayos infrarrojos Estaño Seleniuro Estudio experimental Fotodiodo Plomo Seleniuro Propiedad material Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2794458
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-997-0266-6 
https://dx.doi.org/10.1007/s11664-997-0266-6
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