Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces
- Author
- ZHOU, X1 ; JIANG, S1 ; KIRK, W. P1
[1] NanoFAB Center, Engineering-Physics Building, Texas A&M University, College Station, Texas 77843-4242, United States - Conference title
- Molecular beam epitaxy 1996
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 624-631 ; 1 ; ref : 22 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Béryllium tellurure Composé binaire Couche épitaxique Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Matériau semiconducteur Mécanisme croissance RHEED Semiconducteur II-VI Structure surface Substrat Surface vicinale TEM Be Te BeTe Substrat Si Composé minéral
- Keyword (en)
- Beryllium tellurides Binary compounds Epitaxial layers Crystal growth from vapors Molecular beam epitaxy Experimental study Semiconductor materials Growth mechanism RHEED II-VI semiconductors Surface structure Substrates Vicinal surface TEM Inorganic compounds
- Keyword (es)
- Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2794931
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00911-6 
https://dx.doi.org/10.1016/S0022-0248(96)00911-6
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