Striking effects of cobalt (III) nuclearity in fused salphen complexes on their electroconductivity and thin film transistor activity
- Author
- HOUJOU, Hirohiko1 ; KAMURA, Masakazu2 3 ; NAGANO, Yuta1 ; ITO, Muneyuki1 ; AOMORI, Shigeru2 3 ; OH-E, Masahito2 3
[1] Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[2] Materials & Energy Technology Laboratories, Sharp Corporation, 273-1 Kashiwa, Kashiwa-shi, Chiba 277-0005, Japan
[3] Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan - Source
Organic electronics (Print). 2013, Vol 14, Num 12, pp 3472-3476, 5 p ; ref : 22 ref
- ISSN
- 1566-1199
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Conductivity Polynuclear complex Salphen complex Thin film device Transition metal π-Conjugated system
- Keyword (fr)
- Benzène Cobalt Complexe de cobalt Conductivité électrique Conductivité électronique Couche mince Dispositif couche mince Electron pi Métal transition Oxyde de silicium Semiconducteur type n Silicium Tension de grille Transistor couche mince Verre 7363 8105K 8530T 8535 SiO2 Composé IV-VI
- Keyword (en)
- Benzene Cobalt Cobalt complex Electrical conductivity Electronic conductivity Thin film Thin film device Pi electron Transition metal Silicon oxides n type semiconductor Silicon Gate voltage Thin film transistor Glass IV-VI compound
- Keyword (es)
- Benceno Cobalto Cobalto complejo Conductividad eléctrica Conductividad electrónica Capa fina Dispositivo capa delgada Electrón pi Metal transición Semiconductor tipo n Silicio Voltaje de rejilla Transistor capa delgada Vidrio Compuesto IV-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05K Glasses (including metallic glasses)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28006672
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.orgel.2013.09.022 
https://dx.doi.org/10.1016/j.orgel.2013.09.022
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