Crystallographic Characteristics and p-Type to n-Type Transition in Epitaxial NiO Thin Film
- Autor
- MOLAEI, R1 ; BAYATI, R2 ; NARAYAN, J1
[1] Department of Materials Science and Engineering, NC State University, EB-1, Raleigh, North Carolina 27695-7907, United States
[2] Intel Corporation, IMO-SC, SC2, Santa Clara, California 95054, United States - Fuente
Crystal growth & design. 2013, Vol 13, Num 12, pp 5459-5465, 7 p ; ref : 43 ref
- ISSN
- 1528-7483
- Campo Científico
- Crystallography
- Editor
- American Chemical Society, Washington,DC
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Basse pression Caractéristique électrique Conductivité type n Couche mince Couche épitaxique Diffraction RX Défaut ponctuel Dépôt laser pulsé Effet pression Epitaxie Haute pression Hétérostructure Interface Lacune Microscopie électronique transmission Mécanisme croissance Méthode ablation laser Nickel Pression partielle Relation structure propriété Réaction dirigée Réaction interface Réseau cubique Résistivité électrique Spectre photoélectron RX Stoechiométrie Terminaison surface Zircone stabilisée 6172J 8110A 8115F NiO Substrat silicium
- Palabra clave (in)
- Low pressure Electrical characteristic N type conductivity Thin films Epitaxial layers XRD Point defects Pulsed laser deposition Pressure effects Epitaxy High pressure Heterostructures Interfaces Vacancies Transmission electron microscopy Growth mechanism Laser ablation technique Nickel Partial pressure Property structure relationship Template reaction Interface reaction Cubic lattices Electric resistivity X-ray photoelectron spectra Stoichiometry Surface termination Stabilized zirconia
- Palabra clave (es)
- Característica eléctrica Conductividad tipo n Mecanismo crecimiento Relación estructura propiedad Reacción dirigida Reacción interfase Zircona estabilizada
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28021111
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/cg401408f 
https://dx.doi.org/10.1021/cg401408f
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