Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrors
- Author
- HARMAND, J. C1 ; KOHL, A1 ; JUHEL, M1 ; LE ROUX, G1
[1] France Telecom/CNET Laboratoire de Bagneux, 196 avenue Henri Ravera, B.P. 107, 92225 Bagneux, France - Conference title
- Molecular beam epitaxy 1996
- Conference name
- MBE-IX: International Conference on Molecular Beam Epitaxy (9 ; Malibu, California 1996-08-05)
- Author (monograph)
- KAO, Yung-Chung (Editor)1
[1] Texas Instruments, United States - Source
Journal of crystal growth. 1997, Vol 175-76, pp 372-376 ; 1 ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arsénioantimoniure Commande processus Composition chimique Composé quaternaire Couche épaisse Couche épitaxique Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Gallium Arsénioantimoniure Matériau semiconducteur Miroir Réflexion Bragg répartie Solution solide Al As Ga Sb AlGaAsSb Substrat InP Composé minéral
- Keyword (en)
- Aluminium Antimonides arsenides Process control Chemical composition Quaternary compounds Thick film Epitaxial layers Crystal growth from vapors Molecular beam epitaxy Experimental study Gallium Antimonides arsenides Semiconductor materials Mirrors Distributed Bragg reflection Solid solutions Inorganic compounds
- Keyword (es)
- Antimoniuro arseniuro Capa espesa Antimoniuro arseniuro Reflexión Bragg repartida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2804322
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00883-4 
https://dx.doi.org/10.1016/S0022-0248(96)00883-4
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