Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
- Author
- NAUMANN, Volker1 ; LAUSCH, Dominik1 ; HAGENDORF, Christian1 ; HÄHNEL, Angelika2 ; BAUER, Jan2 ; BREITENSTEIN, Otwin2 ; GRAFF, Andreas3 ; WERNER, Martina1 ; SWATEK, Sina1 ; GROSSER, Stephan1 ; BAGDAHN, Jörg1
[1] Fraunhofer Center for Silicon Photovoltaics CSP, Walter-Hülse-Str. 1, 06120 Halle, Germany
[2] Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
[3] Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Str. 1, 06120 Halle, Germany - Conference name
- International conference on crystalline silicon photovoltaics (SiliconPV 2013) (SiliconPV 2013) (3 ; Hamelin 2013-03-25)
- Source
Solar energy materials and solar cells. 2014, Vol 120, pp 383-389, 7 p ; a ; ref : 29 ref
- ISSN
- 0927-0248
- Scientific domain
- General chemistry, physical chemistry; Energy
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Crystals Potential-induced degradation Silicon Sodium Solar cells Stacking faults
- Keyword (fr)
- Cellule solaire silicium Cellule solaire Défaut empilement Dégradation EBIC Endommagement Haute résolution Jonction p n Matériau cristallin Microscopie électronique balayage Microscopie électronique transmission Profil profondeur Shunt Silicium Sodium Spectrométrie dispersive
- Keyword (en)
- Silicon solar cells Solar cell Stacking fault Degradation EBIC Damaging High resolution p n junction Crystalline material Scanning electron microscopy Transmission electron microscopy Depth profile Shunt Silicon Sodium Dispersive spectrometry
- Keyword (es)
- Célula solar Defecto apilado Degradación Deterioración Alta resolucion Unión p n Material cristalino Microscopía electrónica barrido Microscopía electrónica transmisión Perfil profundidad Shunt Silicio Sodio Espectrometría dispersiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05I Electrical power engineering / 001D05I03 Direct energy conversion and energy accumulation / 001D05I03D Photoelectric conversion
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Electrical engineering. Electroenergetics Energy
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28045383
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.solmat.2013.06.015 
https://dx.doi.org/10.1016/j.solmat.2013.06.015
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/j.solmat.2013.06.015\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Solar energy materials and solar cells\";s:9:\"\u0000*\u0000stitle\";s:29:\"Sol. energy mater. sol. cells\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:3:\"120\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"383\";s:8:\"\u0000*\u0000epage\";s:3:\"389\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0927-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"NAUMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Volker\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:15:\"LAUSCH, Dominik\";i:1;s:20:\"HAGENDORF, Christian\";i:2;s:17:\"H\u00c4HNEL, Angelika\";i:3;s:10:\"BAUER, Jan\";i:4;s:19:\"BREITENSTEIN, Otwin\";i:5;s:14:\"GRAFF, Andreas\";i:6;s:15:\"WERNER, Martina\";i:7;s:12:\"SWATEK, Sina\";i:8;s:16:\"GROSSER, Stephan\";i:9;s:14:\"BAGDAHN, J\u00f6rg\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/j.solmat.2013.06.015\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Solar energy materials and solar cells\";s:9:\"\u0000*\u0000stitle\";s:29:\"Sol. energy mater. sol. cells\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:3:\"120\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"383\";s:8:\"\u0000*\u0000epage\";s:3:\"389\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0927-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"NAUMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Volker\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:15:\"LAUSCH, Dominik\";i:1;s:20:\"HAGENDORF, Christian\";i:2;s:17:\"H\u00c4HNEL, Angelika\";i:3;s:10:\"BAUER, Jan\";i:4;s:19:\"BREITENSTEIN, Otwin\";i:5;s:14:\"GRAFF, Andreas\";i:6;s:15:\"WERNER, Martina\";i:7;s:12:\"SWATEK, Sina\";i:8;s:16:\"GROSSER, Stephan\";i:9;s:14:\"BAGDAHN, J\u00f6rg\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/j.solmat.2013.06.015\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/j.solmat.2013.06.015\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Solar energy materials and solar cells\";s:9:\"\u0000*\u0000stitle\";s:29:\"Sol. energy mater. sol. cells\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:3:\"120\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"383\";s:8:\"\u0000*\u0000epage\";s:3:\"389\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0927-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"NAUMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Volker\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:15:\"LAUSCH, Dominik\";i:1;s:20:\"HAGENDORF, Christian\";i:2;s:17:\"H\u00c4HNEL, Angelika\";i:3;s:10:\"BAUER, Jan\";i:4;s:19:\"BREITENSTEIN, Otwin\";i:5;s:14:\"GRAFF, Andreas\";i:6;s:15:\"WERNER, Martina\";i:7;s:12:\"SWATEK, Sina\";i:8;s:16:\"GROSSER, Stephan\";i:9;s:14:\"BAGDAHN, J\u00f6rg\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/j.solmat.2013.06.015\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Solar energy materials and solar cells\";s:9:\"\u0000*\u0000stitle\";s:29:\"Sol. energy mater. sol. cells\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:3:\"120\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"383\";s:8:\"\u0000*\u0000epage\";s:3:\"389\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0927-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"NAUMANN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Volker\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:15:\"LAUSCH, Dominik\";i:1;s:20:\"HAGENDORF, Christian\";i:2;s:17:\"H\u00c4HNEL, Angelika\";i:3;s:10:\"BAUER, Jan\";i:4;s:19:\"BREITENSTEIN, Otwin\";i:5;s:14:\"GRAFF, Andreas\";i:6;s:15:\"WERNER, Martina\";i:7;s:12:\"SWATEK, Sina\";i:8;s:16:\"GROSSER, Stephan\";i:9;s:14:\"BAGDAHN, J\u00f6rg\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:119:\"Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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