Contribution of stacking fault in lowering the theoretical density of nickel
- Autor
- MITTRA, Joy1 ; WAGHMARE, Umesh V2 ; ARYA, Ashok1 ; DEY, Gautam K1
[1] Materials Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
[2] Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India - Fuente
Computational materials science. 2014, Vol 81, pp 249-252, 4 p ; ref : 15 ref
- ISSN
- 0927-0256
- Campo Científico
- Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Ab initio Projector augmented wave Stacking fault density Stacking fault energy
- Palabra clave (fr)
- Calcul ab initio Densité défaut Densité Distorsion réseau Défaut empilement Méthode fonctionnelle densité Nickel Réseau cubique face centrée
- Palabra clave (in)
- Ab initio calculations Defect density Density Lattice distortion Stacking faults Density functional method Nickel FCC lattices
- Palabra clave (es)
- Densidad defecto Distorsión red
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 28049853
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.commatsci.2013.08.020 
https://dx.doi.org/10.1016/j.commatsci.2013.08.020
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