A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching
- Author
- YANGYANG QI1 ; ZHEN WANG1 ; MINGLIANG ZHANG1 ; FUHUA YANG1 ; XIAODONG WANG1
[1] Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China - Source
Journal of physical chemistry. C. 2013, Vol 117, Num 47, pp 25090-25096, 7 p ; ref : 22 ref
- Publisher
- American Chemical Society, Columbus, OH
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Caractéristique courant tension Dopage Gravure Hafnium Mesure tension électrique Microscopie électronique transmission Monocristal Nanofil Nanomatériau Nanoparticule Pastille électronique Silicium Synthèse nanomatériau Transfert électron 8107B 8107V 8116 Substrat silicium
- Keyword (en)
- Chemical etching IV characteristic Doping Etching Hafnium Voltage measurement Transmission electron microscopy Monocrystals Nanowires Nanostructured materials Nanoparticles Wafers Silicon Nanomaterial synthesis Electron transfer
- Keyword (es)
- Ataque químico Doping Síntesis nanomaterial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28074256
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/jp407720e 
https://dx.doi.org/10.1021/jp407720e
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