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Temperature-Dependent Current―Voltage and Photoresponsive Properties for Semiconducting Nanodevices Fabricated from an Oligothiazole Dithiol and Gold Nanoparticles

Author
TAO TAO1 ; JIAO GENG1 ; LIU HONG2 ; WEI HUANG1 ; TANAKA, Hirofumi2 ; TANAKA, Daisuke2 ; OGAWA, Takuji2
[1] State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China
[2] Department of Chemistry, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka, 560-0043, Japan
Source

Journal of physical chemistry. C. 2013, Vol 117, Num 48, pp 25325-25333, 9 p ; ref : 47 ref

ISSN
1932-7447
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Columbus, OH
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Autoassemblage Bande interdite Caractéristique courant tension Couche autoassemblée Couche mince Dithiol Dépendance température Dépendance tension Effet température Etat solide Génération porteur charge Microstructure Morphologie Nanocomposite Nanomatériau Nanoparticule Nanoélectronique Or Propriété électrique Semiconducteur Semiconductivité Structure granulaire Séparation charge Thiophène dérivé polymère 8107 8116D 8535 8565
Keyword (en)
Self assembly Energy gap Voltage current curve Self-assembled layer Thin film Dithiol Temperature dependence Voltage dependence Temperature effect Solid state Charge carrier generation Microstructure Morphology Nanocomposite Nanostructured materials Nanoparticle Nanoelectronics Gold Electrical properties Semiconductor materials Semiconductivity Granular structure Charge separation Thiophene derivative polymer
Keyword (es)
Autoensamble Banda prohibida Característica corriente tensión Capa autoensamblada Capa fina Ditiol Efecto temperatura Estado sólido Generación portador carga Microestructura Morfología Nanocompuesto Nanopartícula Nanoelectrónica Oro Propiedad eléctrica Semiconductor(material) Semiconductividad Estructura granular Separación carga Tiofeno derivado polímero
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28074652

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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